Integrated Circuits (ICs)

BS2114F-E2

Obsolete

IC GATE DRVR HI/LOW SIDE 8SOIC

Search across all available documentation for this part.

Integrated Circuits (ICs)

Obsolete

IC GATE DRVR HI/LOW SIDE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	BS2114F-E2

Channel Type	Independent
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.173 in
Package / Case	4.4 mm
Package / Case	8-SOIC
Rise / Fall Time (Typ) [custom]	30 ns
Rise / Fall Time (Typ) [custom]	30 ns
Supplier Device Package	8-SOP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Channel Type	Package / Case	Package / Case	Package / Case	Input Type	Logic Voltage - VIL, VIH	Mounting Type	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Type
Rohm Semiconductor BS2114F-E2	8-SOP	20 V	10 VDC	30 ns	30 ns	High-Side Low-Side	Independent	0.173 in	4.4 mm	8-SOIC	Inverting	0.8 V 2.6 V	Surface Mount	2	600 V	-40 °C	125 °C	IGBT N-Channel MOSFET

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side or Low-Side Gate Driver IC Inverting 8-SOP

Technical documentation and resources

No documents available