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NTBG1000N170M1
Discrete Semiconductor Products

NTBG040N120M3S

Active
ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 40 MOHM, 1200 V, M3S, D2PAK-7L

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+2
NTBG1000N170M1
Discrete Semiconductor Products

NTBG040N120M3S

Active
ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 40 MOHM, 1200 V, M3S, D2PAK-7L

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+2

Technical Specifications

Parameters and characteristics for this part

SpecificationNTBG040N120M3S
Current - Continuous Drain (Id) @ 25°C57 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC
Input Capacitance (Ciss) (Max) @ Vds1700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]263 W
Rds On (Max) @ Id, Vgs [Max]54 mOhm
Supplier Device PackageD2PAK-7
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id4.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 5.53
10$ 5.17
DigikeyCut Tape (CT) 1$ 10.60
10$ 7.32
100$ 5.46
Digi-Reel® 1$ 10.60
10$ 7.32
100$ 5.46
Tape & Reel (TR) 800$ 4.92
ON SemiconductorN/A 1$ 5.25

Description

General part information

NTBG040N120M3S Series

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.