Discrete Semiconductor Products

HUF75329P3

Obsolete

ON Semiconductor

55V 42A 94W 25MΩ@10V,42A 4V 1 N-CHANNEL TO-220-3 MOSFETS

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

HUF75329P3

Obsolete

ON Semiconductor

55V 42A 94W 25MΩ@10V,42A 4V 1 N-CHANNEL TO-220-3 MOSFETS

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HUF75329P3

Current - Continuous Drain (Id) @ 25°C	49 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	75 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	128 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

HUF75631S3S Series

N-Channel UltraFET Power MOSFET 100V, 33A, 40mΩ

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Package / Case [y]	Package / Case [x]
ON Semiconductor HUF75617D3S	4 V	20 V	570 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	39 nC	TO-252AA	90 mOhm	64 W	10 V	-55 °C	175 ░C	N-Channel	100 V	MOSFET (Metal Oxide)	16 A	Surface Mount
ON Semiconductor HUF75631S3ST	4 V	20 V	1220 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		TO-263 (D2PAK)	40 mOhm	120 W	10 V	-55 °C	175 ░C	N-Channel	100 V	MOSFET (Metal Oxide)	33 A	Surface Mount	79 nC
ON Semiconductor HUF75343G3	4 V	20 V		TO-247-3	205 nC	TO-247-3	9 mOhm		10 V	-55 °C	175 ░C	N-Channel	55 V	MOSFET (Metal Oxide)	75 A	Through Hole		270 W
ON Semiconductor HUF75321D3	4 V	20 V	680 pF	IPAK TO-251-3 Short Leads TO-251AA		IPAK	36 mOhm	93 W	10 V	-55 °C	175 ░C	N-Channel	55 V	MOSFET (Metal Oxide)	20 A	Through Hole	44 nC
ON Semiconductor HUF75329P3	4 V	20 V	1060 pF	TO-220-3		TO-220-3	24 mOhm		10 V	-55 °C	175 ░C	N-Channel	55 V	MOSFET (Metal Oxide)	49 A	Through Hole	75 nC	128 W
ON Semiconductor HUF75344S3ST	4 V	20 V	3200 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		TO-263 (D2PAK)	8 mOhm		10 V	-55 °C	175 ░C	N-Channel	55 V	MOSFET (Metal Oxide)	75 A	Surface Mount		285 W
ON Semiconductor HUF75344S3ST	4 V	20 V	3200 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		TO-263 (D2PAK)	8 mOhm		10 V	-55 °C	175 ░C	N-Channel	55 V	MOSFET (Metal Oxide)	75 A	Surface Mount		285 W
ON Semiconductor HUF75637S3S	4 V	20 V	1700 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	108 nC	TO-263 (D2PAK)		155 W	10 V	-55 °C	175 ░C	N-Channel	100 V	MOSFET (Metal Oxide)	44 A	Surface Mount
ON Semiconductor HUF75321D3S	4 V	20 V	680 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252AA	36 mOhm	93 W	10 V	-55 °C	175 ░C	N-Channel	55 V	MOSFET (Metal Oxide)	20 A	Surface Mount	44 nC
ON Semiconductor HUF75631SK8T	4 V	20 V	1225 pF	8-SOIC		8-SOIC	39 mOhm	2.5 W	10 V	-55 °C	150 °C	N-Channel	100 V	MOSFET (Metal Oxide)	5.5 A	Surface Mount	79 nC		3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

LCSC	N/A	1	$ 0.00

Description

General part information

HUF75631S3S Series

N-Channel UltraFET Power MOSFET 100 V, 33 A, 40 mΩ

Documents

Technical documentation and resources