Specification	ECH8664R-TL-H

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	23.5 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

ECH8664R Series

N-Channel Power MOSFET, 30V, 7A, 23.5mΩ, Dual ECH8

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Power - Max [Max]	FET Feature	Supplier Device Package	Technology	Operating Temperature
ON Semiconductor ECH8664R-TL-H	10 nC	30 V	2 N-Channel (Dual)	7 A	Surface Mount	23.5 mOhm	1.4 W	Logic Level Gate	8-ECH	MOSFET (Metal Oxide)	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

ECH8664R is an N-Channel Power MOSFET, 30V, 7A, 23.5mΩ, Dual ECH8 for General-Purpose Switching Device Applications.