Discrete Semiconductor Products
PSMN1R8-80SSFJ
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL 40 V, 1.9 MOHM, 200 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZEDNEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY
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Discrete Semiconductor Products
PSMN1R8-80SSFJ
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL 40 V, 1.9 MOHM, 200 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZEDNEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN1R8-80SSFJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 270 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 222 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 15319 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1235 |
| Power Dissipation (Max) | 341 W |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PSMN1R8-80SSF Series
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
Documents
Technical documentation and resources