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SOT1205
Discrete Semiconductor Products

PHPT610030NPK-QX

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Nexperia USA Inc.

NPN/PNP HIGH POWER DOUBLE BIPOLAR TRANSISTOR

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SOT1205
Discrete Semiconductor Products

PHPT610030NPK-QX

Active
Nexperia USA Inc.

NPN/PNP HIGH POWER DOUBLE BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT610030NPK-QX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition125 MHz, 140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSOT-1205, 8-LFPAK56
Power - Max [Max]1.25 W
QualificationAEC-Q101
Supplier Device PackageLFPAK56D
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic360 mV, 330 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.43

Description

General part information

PHPT610030NPK-Q Series

NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.