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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IRFB4332PBF

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INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 33 MOHM;

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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IRFB4332PBF

Active
INFINEON

IR MOSFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 33 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB4332PBF
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]5860 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3
Power Dissipation (Max)390 W
Rds On (Max) @ Id, Vgs33 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1364$ 3.74
Tube 1$ 4.85
10$ 3.22
100$ 2.29
500$ 1.90
1000$ 1.81
NewarkEach 1$ 3.77
10$ 2.76
25$ 2.52
50$ 2.36
100$ 2.19
250$ 2.10

Description

General part information

IRFB4332 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources