Discrete Semiconductor Products

MSJP20N65A-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MSJP20N65A-BP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	151 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]
MCC (Micro Commercial Components) MSJP20N65-BP	30 V	10 V	TO-220AB (H)	151 W	150 °C	-55 °C	TO-220-3	Through Hole	N-Channel	4.5 V	39 nC	650 V	MOSFET (Metal Oxide)	20 A	180 mOhm	1724 pF
MCC (Micro Commercial Components) MSJP20N65A-BP	30 V	10 V	TO-220AB (H)	151 W	150 °C	-55 °C	TO-220-3	Through Hole	N-Channel	4 V	53 nC	650 V	MOSFET (Metal Oxide)	20 A	190 mOhm		1860 pF
MCC (Micro Commercial Components) MSJP20N65-BP	30 V	10 V	TO-220AB (H)	151 W	150 °C	-55 °C	TO-220-3	Through Hole	N-Channel	4.5 V	39 nC	650 V	MOSFET (Metal Oxide)	20 A	170 mOhm	1724 pF
MCC (Micro Commercial Components) MSJP20N65A-BP	30 V	10 V	TO-220AB (H)	151 W	150 °C	-55 °C	TO-220-3	Through Hole	N-Channel	4 V	53 nC	650 V	MOSFET (Metal Oxide)	20 A	190 mOhm		1860 pF

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General part information

N-Channel 650 V 20A (Tc) 151W Through Hole TO-220AB (H)

Technical documentation and resources