Discrete Semiconductor Products

SPU11N10

Obsolete

MOSFET N-CH 100V 10.5A TO251-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 10.5A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU11N10

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	P-TO251-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)
INFINEON SPU11N10	10.5 A	P-TO251-3-1	N-Channel	MOSFET (Metal Oxide)	175 °C	-55 °C	18.3 nC	Through Hole	400 pF	4 V	10 V	IPAK TO-251-3 Short Leads TO-251AA	170 mOhm	50 W	20 V	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.43

General part information

N-Channel 100 V 10.5A (Tc) 50W (Tc) Through Hole P-TO251-3-1

Technical documentation and resources