Discrete Semiconductor Products

PJL9452A_R2_00001

NRND

100V N-CHANNEL ENHANCEMENT MODE

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Discrete Semiconductor Products

NRND

100V N-CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	PJL9452A_R2_00001

Current - Continuous Drain (Id) @ 25°C	3.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1413 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case	Package / Case
Panjit International Inc. PJL9452A_R2_00001	8-SOP	3.3 A	115 mOhm	2.5 W	20 V	4.5 V 10 V	2.5 V	1413 pF	150 °C	-55 °C	Surface Mount	MOSFET (Metal Oxide)	N-Channel	100 V	20 nC	0.154 in	8-SOIC	3.9 mm

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General part information

N-Channel 100 V 3.3A (Ta) 2.5W (Ta) Surface Mount 8-SOP

Technical documentation and resources