Discrete Semiconductor Products

SIHA30N60AEL-GE3

Obsolete

MOSFETS 600V VDS 30V VGS TO-220 FULLPAK

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Discrete Semiconductor Products

Obsolete

MOSFETS 600V VDS 30V VGS TO-220 FULLPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA30N60AEL-GE3

Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	120 nC
Input Capacitance (Ciss) (Max)	2565 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

Part	Mounting Type	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Technology	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Gate Charge (Max)	Power Dissipation (Max)
Vishay Dale SIHA30N60AEL-GE3	Through Hole	28 A	2565 pF	MOSFET (Metal Oxide)	4 V	10 V	N-Channel	600 V	120 mOhm	TO-220-3 Full Pack	TO-220 Full Pack	-55 °C	150 °C	30 V	120 nC	39 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 2.75	1m+
Mouser	N/A	1000	$ 3.02	1m+

3D models and CAD resources for this part

General part information

N-Channel 600 V 28A (Tc) 39W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources