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SOT-223 (TO-261)
Discrete Semiconductor Products

NSS1C200MZ4T3G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, NPN, 100 V, 2.0 A/ REEL ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsDatasheetDatasheet+1
SOT-223 (TO-261)
Discrete Semiconductor Products

NSS1C200MZ4T3G

Active
ON Semiconductor

LOW V<SUB>CE(SAT)</SUB> TRANSISTOR, NPN, 100 V, 2.0 A/ REEL ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationNSS1C200MZ4T3G
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120 hFE
Frequency - Transition120 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]800 mW
Supplier Device PackageSOT-223 (TO-261)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic220 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.23
2000$ 0.21
Digi-Reel® 1$ 0.62
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.23
2000$ 0.21
Tape & Reel (TR) 4000$ 0.21
8000$ 0.20
12000$ 0.19
28000$ 0.18
NewarkEach (Supplied on Full Reel) 4000$ 0.20
12000$ 0.19
ON SemiconductorN/A 1$ 0.19

Description

General part information

NSS1C200 Series

Low VCE(sat)Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsatand high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.