Integrated Circuits (ICs)
MAX620EWN+
ActiveAnalog Devices Inc./Maxim Integrated
IC GATE DRVR HIGH-SIDE 18SOIC
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Integrated Circuits (ICs)
MAX620EWN+
ActiveAnalog Devices Inc./Maxim Integrated
IC GATE DRVR HIGH-SIDE 18SOIC
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DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MAX620EWN+ |
|---|---|
| Channel Type | Independent |
| Driven Configuration | High-Side |
| Gate Type | N-Channel MOSFET, MOSFET (N-Channel) |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 4 |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 18-SOIC |
| Package / Case | 7.5 mm, 0.295 " |
| Rise / Fall Time (Typ) | 1.7 µs, 2.5 µs |
| Supplier Device Package | 18-SOIC |
| Voltage - Supply [Max] | 16.5 V |
| Voltage - Supply [Min] | 4.5 V |
MAX620 Series
Quad, High-Side MOSFET Driver
| Part | Gate Type | Rise / Fall Time (Typ) | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Channel Type | Driven Configuration | Package / Case | Package / Case | Package / Case | Input Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-PDIP | 16.5 V | 4.5 V | 4 | 85 C | -40 ¯C | Through Hole | Independent | High-Side | 0.3 in | 18-DIP | 7.62 mm | Non-Inverting | |
Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-PDIP | 16.5 V | 4.5 V | 4 | 70 °C | 0 °C | Through Hole | Independent | High-Side | 0.3 in | 18-DIP | 7.62 mm | Non-Inverting | |
Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-SOIC | 16.5 V | 4.5 V | 4 | 85 C | -40 ¯C | Surface Mount | Independent | High-Side | 18-SOIC | Non-Inverting | 0.295 " 7.5 mm | ||
Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-PDIP | 16.5 V | 4.5 V | 4 | 70 °C | 0 °C | Through Hole | Independent | High-Side | 0.3 in | 18-DIP | 7.62 mm | Non-Inverting | |
Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-SOIC | 16.5 V | 4.5 V | 4 | 70 °C | 0 °C | Surface Mount | Independent | High-Side | 18-SOIC | Non-Inverting | 0.295 " 7.5 mm | ||
Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-SOIC | 16.5 V | 4.5 V | 4 | 85 C | -40 ¯C | Surface Mount | Independent | High-Side | 18-SOIC | Non-Inverting | 0.295 " 7.5 mm | ||
Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-SOIC | 16.5 V | 4.5 V | 4 | 70 °C | 0 °C | Surface Mount | Independent | High-Side | 18-SOIC | Non-Inverting | 0.295 " 7.5 mm | ||
Analog Devices Inc./Maxim Integrated | MOSFET (N-Channel) N-Channel MOSFET | 1.7 µs 2.5 µs | 18-SOIC | 16.5 V | 4.5 V | 4 | 85 C | -40 ¯C | Surface Mount | Independent | High-Side | 18-SOIC | Non-Inverting | 0.295 " 7.5 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 12.25 | |
| 1320 | $ 12.25 | |||
| Tube | 40 | $ 10.63 | ||
Description
General part information
MAX620 Series
Quad, High-Side MOSFET Driver
Documents
Technical documentation and resources