Discrete Semiconductor Products

PHD20N06T,118

Obsolete

MOSFET N-CH 55V 18A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 18A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD20N06T,118

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	422 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs [Max]	77 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Freescale Semiconductor - NXP PHD20N06T,118	20 V	77 mOhm	18 A	55 V	11 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	51 W	10 V	DPAK	422 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 18A (Tc) 51W (Tc) Surface Mount DPAK

Technical documentation and resources