Discrete Semiconductor Products

SIC05120B-BP

LTB

DIODE SIL CARB 1200V 5A TO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

DIODE SIL CARB 1200V 5A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIC05120B-BP

Capacitance @ Vr, F	353 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Speed	500 mA
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package
MCC (Micro Commercial Components) SIC05120B-BP	Through Hole	175 ░C	-55 °C	1.2 kV	353 pF	SiC (Silicon Carbide) Schottky	0 ns	5 A	TO-220-2	3 µA	500 mA	1.7 V	TO-220AC
MCC (Micro Commercial Components) SIC05120B-BP	Through Hole	175 ░C	-55 °C	1.2 kV	353 pF	SiC (Silicon Carbide) Schottky		5 A	TO-220-2	3 µA	500 mA	1.7 V	TO-220AC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 5A Through Hole TO-220AC

Technical documentation and resources