Discrete Semiconductor Products

RJK0346DPA-01#J0B

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NCH POWER MOSFET 30V 65A 2MOHM POWER SON-8 5X6

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Discrete Semiconductor Products

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NCH POWER MOSFET 30V 65A 2MOHM POWER SON-8 5X6

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0346DPA-01#J0B

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7650 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 30V 65A 2mohm Power SON-8 5x6

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation RJK0346DPA-01#J0B	MOSFET (Metal Oxide)	10 V 49 nC	1.8 mOhm	8-PowerWDFN	150 °C	65 W	4.5 V 10 V	65 A	8-WPAK	N-Channel	30 V	Surface Mount	20 V	7650 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.