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5P40
Discrete Semiconductor Products

5P40

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Goford Semiconductor

P40V,RD(MAX)<85M@-10V,RD(MAX)<12

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5P40
Discrete Semiconductor Products

5P40

Active
Goford Semiconductor

P40V,RD(MAX)<85M@-10V,RD(MAX)<12

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification5P40
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)2 W
Rds On (Max) @ Id, Vgs [Max]85 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 6267$ 0.47
300000$ 0.05

Description

General part information

5P40

P40V,RD(MAX)<85M@-10V,RD(MAX)<12

Documents

Technical documentation and resources