Discrete Semiconductor Products

IPU95R2K0P7AKMA1

Obsolete

MOSFET N-CH 950V 4A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 950V 4A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU95R2K0P7AKMA1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	330 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	37 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPU95R2K0P7AKMA1	330 pF	950 V	150 °C	-55 °C	N-Channel	10 V	Through Hole	37 W	4 A	PG-TO251-3	MOSFET (Metal Oxide)	20 V	IPAK TO-251-3 Short Leads TO-251AA	2 Ohm	3.5 V	10 nC

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General part information

N-Channel 950 V 4A (Tc) 37W (Tc) Through Hole PG-TO251-3

Technical documentation and resources