Discrete Semiconductor Products

IRG7PH42U-EP

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IGBT TRENCH 1200V 90A TO-247AD

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Discrete Semiconductor Products

Active

IGBT TRENCH 1200V 90A TO-247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IRG7PH42U-EP

Current - Collector (Ic) (Max) [Max]	90 A
Current - Collector Pulsed (Icm)	90 A
Gate Charge	157 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	385 W
Reverse Recovery Time (trr)	153 ns
Supplier Device Package	TO-247AD
Switching Energy	2.11 mJ, 1.18 mJ
Td (on/off) @ 25°C [custom]	229 ns
Td (on/off) @ 25°C [custom]	25 ns
Test Condition	15 V, 600 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	Switching Energy	Test Condition	Gate Charge	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Package / Case	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C
INFINEON IRG7PH42U-EP	385 W	1.18 mJ 2.11 mJ	10 Ohm 15 V 30 A 600 V	157 nC	229 ns	25 ns	153 ns	90 A	90 A	175 °C	-55 °C	Trench	TO-247-3	TO-247AD	Through Hole	1200 V	2 V
INFINEON IRG7PH42U-EP	385 W	1.18 mJ 2.11 mJ	10 Ohm 15 V 30 A 600 V	157 nC	229 ns	25 ns	153 ns	90 A	90 A	175 °C	-55 °C	Trench	TO-247-3	TO-247AD	Through Hole	1200 V	2 V
INFINEON IRG7PH42UD2PBF	321 W	1.32 mJ	10 Ohm 15 V 30 A 600 V	234 nC				60 A	90 A	150 °C	-55 °C	Trench	TO-247-3	TO-247AC	Through Hole	1200 V	2.02 V	-	233 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench 1200 V 90 A 385 W Through Hole TO-247AD

Technical documentation and resources