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ES1BJ
Discrete Semiconductor Products

ES1BJ

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Nexperia USA Inc.

100 V, 1 A HYPERFAST RECOVERY RECTIFIER IN SMA

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ES1BJ
Discrete Semiconductor Products

ES1BJ

Active
Nexperia USA Inc.

100 V, 1 A HYPERFAST RECOVERY RECTIFIER IN SMA

Technical Specifications

Parameters and characteristics for this part

SpecificationES1BJ
Capacitance @ Vr, F15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)35 ns
Speed500 ns, 200 mA
Supplier Device PackageSMA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 5050$ 0.20

Description

General part information

ES1B Series

Hyperfast recovery rectifier, encapsulated in an SMA package.