VS-75EPU12L-N3

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DIODE GEN PURP 1.2KV 75A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 75A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-75EPU12L-N3

Current - Average Rectified (Io)	75 A
Current - Reverse Leakage @ Vr	420 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	265 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.55 V

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Speed	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Grade	Qualification
Vishay General Semiconductor - Diodes Division VS-75EPU12L-N3	2.55 V	Standard	75 A	200 mA 500 ns	TO-247-2	Through Hole	1.2 kV	175 ░C	-55 C	TO-247AD	420 µA	265 ns
Vishay General Semiconductor - Diodes Division VS-75EPU12LHN3	2.55 V	Standard	75 A	200 mA 500 ns	TO-247-2	Through Hole	1.2 kV	175 ░C	-55 C	TO-247AD	420 µA	265 ns	Automotive	AEC-Q101

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General part information

Diode 1200 V 75A Through Hole TO-247AD

Technical documentation and resources