Discrete Semiconductor Products

MUR60120BS-BP

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DIODE GEN PURP 1.2KV 60A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	MUR60120BS-BP

Capacitance @ Vr, F	170 pF
Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	130 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	3.3 V

Part	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]
MCC (Micro Commercial Components) MUR60120BS-BP	TO-247AD	130 ns	170 pF	200 mA 500 ns	60 A	-55 °C	150 °C	TO-247-2	Standard	5 µA	Through Hole	3.3 V	1.2 kV
MCC (Micro Commercial Components) MUR60120B-BP	TO-247AD	85 ns		200 mA 500 ns	60 A	-55 °C	175 ░C	TO-247-2	Standard	15 µA	Through Hole	3.3 V	1.2 kV
MCC (Micro Commercial Components) MUR60120B-BP	TO-247AD	85 ns		200 mA 500 ns	60 A	-55 °C	175 ░C	TO-247-2	Standard	15 µA	Through Hole	3.3 V	1.2 kV
MCC (Micro Commercial Components) MUR60120BS-BP	TO-247AD	130 ns	170 pF	200 mA 500 ns	60 A	-55 °C	150 °C	TO-247-2	Standard	5 µA	Through Hole	3.3 V	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 60A Through Hole TO-247AD

Technical documentation and resources