Discrete Semiconductor Products

IPS80R750P7AKMA1

Obsolete

MOSFET N-CH 800V 7A TO251-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 7A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS80R750P7AKMA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPS80R750P7AKMA1	460 pF	MOSFET (Metal Oxide)	150 °C	-55 °C	800 V	3.5 V	IPAK TO-251-3 Short Leads TO-251AA	7 A	750 mOhm	Through Hole	51 W	20 V	10 V	PG-TO251-3	N-Channel	17 nC

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General part information

N-Channel 800 V 7A (Tc) 51W (Tc) Through Hole PG-TO251-3

Technical documentation and resources