Discrete Semiconductor Products

MCT15P02-TP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MCT15P02-TP

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18.6 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	900 mV

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C
MCC (Micro Commercial Components) MCT15P02-TP	18.6 nC	SOT-223	1.8 V	4.5 V	900 mV	1.25 W	-55 C	150 °C	25 mOhm	TO-261-4 TO-261AA	10 V	P-Channel	20 V	MOSFET (Metal Oxide)	1600 pF	Surface Mount	15 A
MCC (Micro Commercial Components) MCT15P02-TP	18.6 nC	SOT-223	1.8 V	4.5 V	900 mV	1.25 W	-55 C	150 °C	25 mOhm	TO-261-4 TO-261AA	10 V	P-Channel	20 V	MOSFET (Metal Oxide)	1600 pF	Surface Mount	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 15A 1.25W Surface Mount SOT-223

Technical documentation and resources