Discrete Semiconductor Products

IXFA7N80P

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DISCMOSFETN-CH HIPERFET-POLAR TO-263D2/ TUBE

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Discrete Semiconductor Products

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DISCMOSFETN-CH HIPERFET-POLAR TO-263D2/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA7N80P

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	1.44 Ohm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type
Littelfuse/Commercial Vehicle Products IXFA7N80P	800 V	Surface Mount	200 W	32 nC	1.44 Ohm	-55 °C	150 °C	10 V	MOSFET (Metal Oxide)	TO-263AA (IXFA)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7 A	1890 pF	30 V	N-Channel

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General part information

N-Channel 800 V 7A (Tc) 200W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources