Discrete Semiconductor Products

BUK6Y10-30PX

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BUK6Y10-30P - 30 V, P-CHANNEL TRENCH MOSFET@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

Active

BUK6Y10-30P - 30 V, P-CHANNEL TRENCH MOSFET@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6Y10-30PX

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	110 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Mounting Type	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BUK6Y10-30PX	4.5 V 10 V	110 W	2360 pF	AEC-Q101	64 nC	MOSFET (Metal Oxide)	SC-100 SOT-669	Surface Mount	20 V	P-Channel	3 V	LFPAK56 Power-SO8	30 V	-55 °C	175 ░C	Automotive	10 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources