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1SS403E,L3F
Discrete Semiconductor Products

1SS403E,L3F

Active
Toshiba Semiconductor and Storage

DIODES, 200 V/0.1 A SWITCHING DIODE, SOD-523(ESC)

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1SS403E,L3F
Discrete Semiconductor Products

1SS403E,L3F

Active
Toshiba Semiconductor and Storage

DIODES, 200 V/0.1 A SWITCHING DIODE, SOD-523(ESC)

Technical Specifications

Parameters and characteristics for this part

Specification1SS403E,L3F
Capacitance @ Vr, F3 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Package / CaseSC-79, SOD-523
Reverse Recovery Time (trr)60 ns
Speed200 mA
SpeedAny Speed
Supplier Device PackageESC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If [Max]1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.20

Description

General part information

1SS403E Series

Diodes, 200 V/0.1 A Switching diode, SOD-523(ESC)