Specification	HN1C03FU-B,LF

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

HN1C03FU Series

Bipolar Transistors, NPN + NPN Bipolar Transistor, 20 V, 0.3 A, SOT-363(US6)

Part	Operating Temperature	Frequency - Transition	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Package / Case	Transistor Type
Toshiba Semiconductor and Storage HN1C03FU-B,LF	150 °C	30 MHz	200 mW	100 nA	100 mV	20 V	Surface Mount	US6	350	300 mA	6-TSSOP SC-88 SOT-363	2 NPN (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	14540	$ 0.33

General part information

Bipolar Transistors, NPN + NPN Bipolar Transistor, 20 V, 0.3 A, SOT-363(US6)

Technical documentation and resources