Discrete Semiconductor Products
IPA65R1K5CEXKSA1
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COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 650 V
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Discrete Semiconductor Products
IPA65R1K5CEXKSA1
ObsoleteINFINEON
COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 650 V
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPA65R1K5CEXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.2 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 Full Pack |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.50 | |
Description
General part information
IPA65R1 Series
N-Channel 650 V 5.2A (Tc) 30W (Tc) Through Hole PG-TO220-FP
Documents
Technical documentation and resources