Specification	MJE5850G

Current - Collector (Ic) (Max) [Max]	8 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max)	300 V

MJE5850 Series

8.0 A, 300 V PNP Bipolar Power Transistor

Part	Supplier Device Package	Transistor Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor MJE5850G	TO-220	PNP	Through Hole	150 °C	-65 °C	80 W	5 V	8 A	5 hFE	TO-220-3	300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJE5850 Series

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing