Discrete Semiconductor Products

IPD12CN10NGBUMA1

Obsolete

MOSFET N-CH 100V 67A TO252-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 67A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD12CN10NGBUMA1

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	4320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	12.4 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	FET Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
INFINEON IPD12CN10NGBUMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	100 V	4320 pF	PG-TO252-3	67 A	125 W	4 V	MOSFET (Metal Oxide)	20 V	N-Channel	Surface Mount	175 °C	-55 °C	65 nC	12.4 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources

No documents available