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1N5413GP-AP
Discrete Semiconductor Products

SB12100-BP

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1N5413GP-AP
Discrete Semiconductor Products

SB12100-BP

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSB12100-BP
Capacitance @ Vr, F500 pF
Current - Average Rectified (Io)12 A
Current - Reverse Leakage @ Vr500 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-201AD, Axial
Speed200 mA, 500 ns
Supplier Device PackageDO-201AD
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If850 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 12000$ 0.33

Description

General part information

SB12100 Series

Diode 100 V 12A Through Hole DO-201AD

Documents

Technical documentation and resources