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TO-247-3 AD EP
Discrete Semiconductor Products

FGH20N60SFDTU

Obsolete
ON Semiconductor

IGBT, 650V, 20A, 2.2V, TO-247<BR>HIGH SPEED FIELD STOP

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TO-247-3 AD EP
Discrete Semiconductor Products

FGH20N60SFDTU

Obsolete
ON Semiconductor

IGBT, 650V, 20A, 2.2V, TO-247<BR>HIGH SPEED FIELD STOP

Technical Specifications

Parameters and characteristics for this part

SpecificationFGH20N60SFDTU
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)60 A
Gate Charge65 nC
IGBT TypeField Stop
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]165 W
Reverse Recovery Time (trr)34 ns
Supplier Device PackageTO-247-3
Switching Energy370 µJ, 160 µJ
Td (on/off) @ 25°C90 ns
Td (on/off) @ 25°C13 ns
Test Condition20 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FGH20N60UFD Series

Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.