
IXTP6N50D2
ActiveDISCMOSFET N-CH DEPL MODE-D2 TO-220AB/FP
Deep-Dive with AI
Search across all available documentation for this part.

IXTP6N50D2
ActiveDISCMOSFET N-CH DEPL MODE-D2 TO-220AB/FP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTP6N50D2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 500 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 500 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 9.19 | |
| 50 | $ 7.34 | |||
| 100 | $ 6.56 | |||
| 500 | $ 5.79 | |||
| 1000 | $ 5.21 | |||
| 2000 | $ 4.88 | |||
Description
General part information
IXTP6N50D2 Series
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).
Documents
Technical documentation and resources