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Littelfuse Power Semi TO-220 3 H 3L image
Discrete Semiconductor Products

IXTP6N50D2

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Littelfuse/Commercial Vehicle Products

DISCMOSFET N-CH DEPL MODE-D2 TO-220AB/FP

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Littelfuse Power Semi TO-220 3 H 3L image
Discrete Semiconductor Products

IXTP6N50D2

Active
Littelfuse/Commercial Vehicle Products

DISCMOSFET N-CH DEPL MODE-D2 TO-220AB/FP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTP6N50D2
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)500 V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs96 nC
Input Capacitance (Ciss) (Max) @ Vds2800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs500 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 9.19
50$ 7.34
100$ 6.56
500$ 5.79
1000$ 5.21
2000$ 4.88

Description

General part information

IXTP6N50D2 Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Documents

Technical documentation and resources