HMC590-SX
Active1 WATT POWER AMPLIFIER CHIP, 6 - 10 GHZ
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HMC590-SX
Active1 WATT POWER AMPLIFIER CHIP, 6 - 10 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC590-SX |
|---|---|
| Current - Supply | 820 mA |
| Frequency [Max] | 10 GHz |
| Frequency [Min] | 6 GHz |
| Gain | 24 dB |
| Mounting Type | Surface Mount |
| P1dB | 30 dBm |
| Package / Case | Die |
| RF Type | General Purpose |
| Supplier Device Package | Die |
| Test Frequency [Max] | 10 GHz |
| Test Frequency [Min] | 6 GHz |
| Voltage - Supply | 7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 2 | $ 185.59 | <3d |
| 4 | $ 178.80 | |||
| 6 | $ 175.01 | |||
| 10 | $ 170.42 | |||
| 14 | $ 167.50 | |||
| 20 | $ 164.51 | |||
| 50 | $ 157.23 | |||
Description
General part information
HMC590-Die Series
The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs).All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosTest Equipment & SensorsMilitary End-UseSpace
Documents
Technical documentation and resources