Discrete Semiconductor Products

VP0808B

Obsolete

MOSFET P-CH 80V 880MA TO39

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 80V 880MA TO39

Technical Specifications

Parameters and characteristics for this part

Specification	VP0808B

Current - Continuous Drain (Id) (Ta)	880 mA
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max)	150 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Package Name	TO-39
Power Dissipation (Max)	6.25 W
Rds On (Max)	5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package / Case	Mounting Type	Vgs (Max)	FET Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Technology	Package Name
Vishay Dale VP0808B-2	10 V	-55 °C	150 °C	5 Ohm	880 mA	150 pF	6.25 W	TO-205AD TO-39-3 Metal Can	Through Hole	20 V	P-Channel	4.5 V	80 V	MOSFET (Metal Oxide)	TO-39
Vishay Dale VP0808B	10 V	-55 °C	150 °C	5 Ohm	880 mA	150 pF	6.25 W	TO-205AD TO-39-3 Metal Can	Through Hole	20 V	P-Channel	4.5 V	80 V	MOSFET (Metal Oxide)	TO-39

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 60.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 80 V 880mA (Ta) 6.25W (Ta) Through Hole TO-39

Technical documentation and resources