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Discrete Semiconductor Products

RX3P07CBHC16

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Rohm Semiconductor

MOSFET, N-CH, 100V, 120A, TO-220AB ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsTwo-Resistor Model for Thermal Simulation Method for Monitoring Switching Waveform +37

Product thumbnail image

Discrete Semiconductor Products

RX3P07CBHC16

Active

Rohm Semiconductor

MOSFET, N-CH, 100V, 120A, TO-220AB ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTwo-Resistor Model for Thermal Simulation Method for Monitoring Switching Waveform +37

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RX3P07CBHC16

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4650 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	135 W
Rds On (Max) @ Id, Vgs	5.2 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	992	$ 5.34
	Tube	1	$ 5.44
		10	$ 4.57
		100	$ 3.69
		500	$ 3.28
		1000	$ 2.81
		2000	$ 2.65
Newark	Each	1	$ 6.10
		10	$ 4.12
		25	$ 3.73
		50	$ 3.36
		100	$ 2.97
		250	$ 2.84
		500	$ 2.70

Description

General part information

RX3P07 Series

RX3P07CBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Documents

Technical documentation and resources

Two-Resistor Model for Thermal Simulation

Method for Monitoring Switching Waveform

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

TO-220AB Dimension

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

What Is Thermal Design

TO-220AB Packing Information

Package Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Report of SVHC under REACH Regulation

Environmental Data

Notes for Temperature Measurement Using Forward Voltage of PN Junction

What is a Thermal Model? (Transistor)

Notes for Calculating Power Consumption:Static Operation

Moisture Sensitivity Level - Transistors

Package Information

PCB Layout Thermal Design Guide

Condition of Soldering / Land Pattern Reference

Package Information

How to Use LTspice® Models

Schematic Design & Verification

Anti-Whisker formation - Transistors

Package Information

Basics of Thermal Resistance and Heat Dissipation

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

About Flammability of Materials

Environmental Data

TO-220AB Explanation for Marking

Package Information

About Export Regulations

Export Information

Types and Features of Transistors

Application Note

Precautions When Measuring the Rear of the Package with a Thermocouple

RX3P07CBH ESD Data

Characteristics Data

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

RX3P07CBH Data Sheet

TO-220AB Reliability Test Result

Manufacturing Data

List of Transistor Package Thermal Resistance

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

TO-220AB Inner Structure

Package Information

Part Explanation

Application Note

RX3P07 Series

Nch 100V 120A, TO-220AB, Power MOSFET

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Rohm Semiconductor RX3P07BBHC16	100 V	MOSFET (Metal Oxide)	TO-220-3	2410 pF	6 V 10 V	8.4 mOhm	Through Hole	70 A	N-Channel	TO-220AB	150 °C	20 V	38 nC
Rohm Semiconductor RX3P07CBHC16	100 V	MOSFET (Metal Oxide)	TO-220-3	4650 pF	6 V 10 V	5.2 mOhm	Through Hole	70 A	N-Channel	TO-220AB	150 °C	20 V		73 nC	135 W