Discrete Semiconductor Products

GA20JT12-263

Obsolete

TRANS SJT 1200V 45A D2PAK

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Discrete Semiconductor Products

Obsolete

TRANS SJT 1200V 45A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	GA20JT12-263

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	1.2 kV
Input Capacitance (Ciss) (Max) @ Vds	3091 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	282 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide Junction Transistor)

Part	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
GeneSiC Semiconductor GA20JT12-263	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	1.2 kV	TO-263-7	45 A	60 mOhm	175 °C	SiC (Silicon Carbide Junction Transistor)	Surface Mount	3091 pF	282 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 22.45

General part information

1200 V 45A (Tc) 282W (Tc) Surface Mount TO-263-7

Technical documentation and resources