Specification	PSMNR70-40YSNX

Current - Continuous Drain (Id) @ 25°C	320 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	235 nC
Input Capacitance (Ciss) (Max) @ Vds	14307 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs [Max]	0.81 Ohm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMNR70-40YSN Series

N-channel 40 V, 0.81 mOhm, ASFET for Battery System in LFPAK56E

Part	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Package / Case	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMNR70-40YSNX	N-Channel	20 V	235 nC	Schottky Diode (Body)	14307 pF	333 W	3.6 V	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	SOT-1023 4-LFPAK	Surface Mount	175 °C	-55 °C	40 V	0.81 Ohm	320 A	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.23

Description

General part information

PSMNR70-40YSN Series

ASFET for Battery System applications, characterized by low RDSonand strong SOA capability for reduced I²R conduction losses. ASFETs deliver high efficiency, reduced heat generation and superior handling of inrush current during transient and fault conditions.