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TO-263-3
Discrete Semiconductor Products

IDK08G120C5XTMA1

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INFINEON

COOLSIC™ SCHOTTKY DIODES GENERATION 5 1200 V, 8 A IN D2PAK REAL 2-PIN PACKAGE.

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TO-263-3
Discrete Semiconductor Products

IDK08G120C5XTMA1

Active
INFINEON

COOLSIC™ SCHOTTKY DIODES GENERATION 5 1200 V, 8 A IN D2PAK REAL 2-PIN PACKAGE.

Technical Specifications

Parameters and characteristics for this part

SpecificationIDK08G120C5XTMA1
Capacitance @ Vr, F365 pF
Current - Average Rectified (Io)22.8 A
Current - Reverse Leakage @ Vr40 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackagePG-TO263-2-1
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.95 V
PartMounting TypePackage / CaseOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Voltage - DC Reverse (Vr) (Max) [Max]SpeedTechnologyCurrent - Reverse Leakage @ VrSupplier Device PackageVoltage - Forward (Vf) (Max) @ IfCurrent - Average Rectified (Io)Capacitance @ Vr, FReverse Recovery Time (trr)
Surface Mount
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
175 ░C
-55 °C
1.2 kV
500 mA
SiC (Silicon Carbide) Schottky
40 µA
PG-TO263-2-1
1.95 V
22.8 A
365 pF
0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.10
10$ 3.39
100$ 2.41
500$ 2.00
Digi-Reel® 1$ 5.10
10$ 3.39
100$ 2.41
500$ 2.00
N/A 94$ 4.05
Tape & Reel (TR) 1000$ 1.87
2000$ 1.86

Description

General part information

IDK08G120 Series

TheCoolSiC™ Schottky diodes generation 51200 V, 8 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.