Discrete Semiconductor Products

J177,126

Obsolete

JFET P-CH 30V TO92-3

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Discrete Semiconductor Products

Obsolete

JFET P-CH 30V TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	J177,126

Current - Drain (Idss) @ Vds (Vgs=0) [custom]	1.5 mA
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	8 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	400 mW
Resistance - RDS(On)	300 Ohms
Supplier Device Package	TO-92-3
Voltage - Breakdown (V(BR)GSS)	30 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Voltage - Breakdown (V(BR)GSS)	Supplier Device Package	Current - Drain (Idss) @ Vds (Vgs=0) [custom]	Power - Max [Max]	FET Type	Package / Case	Resistance - RDS(On)	Operating Temperature
Freescale Semiconductor - NXP J177,126	Through Hole	30 V	8 pF	30 V	TO-92-3	1.5 mA	400 mW	P-Channel	TO-226-3 TO-92-3	300 Ohms	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

JFET P-Channel 30 V 400 mW Through Hole TO-92-3

Technical documentation and resources