Discrete Semiconductor Products

SI1469DH-T1-GE3

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MOSFET P-CH 20V 2.7A SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 20V 2.7A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1469DH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	2.78 W, 1.5 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division SI1469DH-T1-GE3	2.7 A	1.5 V	1.5 W 2.78 W	P-Channel	20 V	SC-70-6	80 mOhm	12 V	6-TSSOP SC-88 SOT-363	8.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	470 pF	10 V	2.5 V	Surface Mount
Vishay General Semiconductor - Diodes Division SI1469DH-T1-E3	2.7 A	1.5 V	1.5 W 2.78 W	P-Channel	20 V	SC-70-6	80 mOhm	12 V	6-TSSOP SC-88 SOT-363	8.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	470 pF	10 V	2.5 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6

Technical documentation and resources