Discrete Semiconductor Products

AUIRFS6535

Obsolete

MOSFET N-CH 300V 19A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 300V 19A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFS6535

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	210 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	185 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Grade	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)
INFINEON AUIRFS6535	MOSFET (Metal Oxide)	Automotive	57 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	19 A	210 W	2340 pF	AEC-Q101	10 V	300 V	185 mOhm	Surface Mount	5 V	N-Channel	175 °C	-55 °C	20 V
INFINEON AUIRFS6535TRL	MOSFET (Metal Oxide)	Automotive	57 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	19 A	210 W	2340 pF	AEC-Q101	10 V	300 V	185 mOhm	Surface Mount	5 V	N-Channel	175 °C	-55 °C	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 300 V 19A (Tc) 210W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources