Zenode.ai Logo
Beta
Infineon Technologies AG-CY7C1069G-10ZSXI SRAM Chip SRAM Chip Async Single 5V 16M-bit 2M x 8 10ns 54-Pin TSOP-II Tray
Integrated Circuits (ICs)

CY14B116N-ZSP25XI

Active
INFINEON

NVSRAM, 16 MBIT, 1M X 16BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, TSOP-II-54

Deep-Dive with AI

Search across all available documentation for this part.

Infineon Technologies AG-CY7C1069G-10ZSXI SRAM Chip SRAM Chip Async Single 5V 16M-bit 2M x 8 10ns 54-Pin TSOP-II Tray
Integrated Circuits (ICs)

CY14B116N-ZSP25XI

Active
INFINEON

NVSRAM, 16 MBIT, 1M X 16BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, TSOP-II-54

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCY14B116N-ZSP25XI
Access Time25 ns
Memory FormatNVSRAM
Memory InterfaceParallel
Memory Organization1 M
Memory Size2 MB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Supplier Device Package54-TSOP II
TechnologyNVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page25 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 127.00
5$ 127.00
DigikeyN/A 164$ 107.06
Tray 1$ 94.38
NewarkEach 1$ 107.65
5$ 105.37
10$ 103.19
25$ 101.45
50$ 99.54
100$ 98.38

Description

General part information

CY14B116 Series

CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory.

Documents

Technical documentation and resources