
CY14B116N-ZSP25XI
ActiveNVSRAM, 16 MBIT, 1M X 16BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, TSOP-II-54
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CY14B116N-ZSP25XI
ActiveNVSRAM, 16 MBIT, 1M X 16BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, TSOP-II-54
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Technical Specifications
Parameters and characteristics for this part
| Specification | CY14B116N-ZSP25XI |
|---|---|
| Access Time | 25 ns |
| Memory Format | NVSRAM |
| Memory Interface | Parallel |
| Memory Organization | 1 M |
| Memory Size | 2 MB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Supplier Device Package | 54-TSOP II |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page | 25 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
CY14B116 Series
CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory.
Documents
Technical documentation and resources