Discrete Semiconductor Products

MJE3055-BP

Obsolete

TRANS NPN 60V 10A TO-220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 60V 10A TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MJE3055-BP

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Frequency - Transition	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic
MCC (Micro Commercial Components) MJE3055-BP	2 MHz	TO-220AB	2 W	20	60 V	TO-220-3	Through Hole	NPN	150 °C	-55 °C	1.2 V
MCC (Micro Commercial Components) MJE3055-BP	2 MHz	TO-220AB	2 W	20	60 V	TO-220-3	Through Hole	NPN	150 °C	-55 °C	1.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 2 W Through Hole TO-220AB

Technical documentation and resources

No documents available