Discrete Semiconductor Products

NTGS3446T1G

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20V 5.1A 36MΩ@4.5V,5.1A 2W 850MV TSOP-6-1.5MM MOSFETS ROHS

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Discrete Semiconductor Products

Active

20V 5.1A 36MΩ@4.5V,5.1A 2W 850MV TSOP-6-1.5MM MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	NTGS3446T1G

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Single N-Channel Power MOSFET 20V 5.1A 45mΩ

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Technology
ON Semiconductor NTGS3446T1G	1.2 V	45 mOhm	20 V	N-Channel	2.5 A	6-TSOP	750 pF	15 nC	SOT-23-6 Thin TSOT-23-6	Surface Mount	12 V	2.5 V 4.5 V	-55 °C	150 °C	500 mW	MOSFET (Metal Oxide)

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General part information

Power MOSFET 20V, 5.1 A, Single N-Channel TSOP-6

Technical documentation and resources