Discrete Semiconductor Products

SI2365EDS-T1-GE3

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MOSFET P-CH 20V 5.9A TO236

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Discrete Semiconductor Products

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MOSFET P-CH 20V 5.9A TO236

Technical Specifications

Parameters and characteristics for this part

Specification	SI2365EDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs [Max]	32 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SI2365EDS-T1-GE3	-55 °C	150 °C	SOT-23-3 (TO-236)	Surface Mount	20 V	5.9 A	1.8 V 4.5 V	MOSFET (Metal Oxide)	P-Channel	1 V	32 mOhm	36 nC	8 V	SC-59 SOT-23-3 TO-236-3

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General part information

P-Channel 20 V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources