Discrete Semiconductor Products

IPU95R1K2P7AKMA1

LTB

MOSFET N-CH 950V 6A TO251-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 950V 6A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU95R1K2P7AKMA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	478 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	FET Type	Vgs (Max)
INFINEON IPU95R1K2P7AKMA1	Through Hole	3.5 V	52 W	PG-TO251-3	IPAK TO-251-3 Short Leads TO-251AA	950 V	15 nC	10 V	6 A	1.2 Ohm	150 °C	-55 °C	478 pF	MOSFET (Metal Oxide)	N-Channel	20 V

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General part information

N-Channel 950 V 6A (Tc) 52W (Tc) Through Hole PG-TO251-3

Technical documentation and resources