CY62167EV18LL-55BVXI is a high-performance CMOS static RAM organized as 1M words by 16 bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. This device also has an automatic power-down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (active-low CE1 HIGH or CE2 LOW or both active-low BHE and active-low BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: the device is deselected (active-low CE1 HIGH or CE2 LOW); outputs are disabled (active-low OE HIGH); both Byte High Enable and Byte Low Enable are disabled (active-low BHE, active-low BLE HIGH); and a write operation is in progress (active-low CE1 LOW, CE2 HIGH and active-low WE LOW).