Discrete Semiconductor Products

PJQ5442_R2_00001

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40V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5442_R2_00001

Current - Continuous Drain (Id) @ 25°C	14 A
Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1258 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	83 W, 2 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Package / Case	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id
Panjit International Inc. PJQ5442_R2_00001	DFN5060-8	4.5 V 10 V	1258 pF	150 °C	-55 °C	20 V	8-PowerVDFN	2 W 83 W	N-Channel	25 nC	14 A	90 A	MOSFET (Metal Oxide)	40 V	5.5 mOhm	Surface Mount	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 14A (Ta), 90A (Tc) 2W (Ta), 83W (Tc) Surface Mount DFN5060-8

Technical documentation and resources

No documents available